Numerical modeling of gate turn-off thyristor using SICOS

This paper presents a numerical model of gate turn-off thyristors (GTO’s). The new concept of a controlledswitch realized by a controlled-current source is first introduced. Using this basic model, an equivalent circuit of the GTO is given. According to the characteristics of GTO given by manufacturers, the equations connected with all the parameters of the equivalent circuit are deduced. All of the parameters of the equivalent circuit are determined. A sample study is presented at the end of the paper. We have simulated this numerical model with the SICOS program and the results are in concordance with the experiment.